题目：Underlying Mechanism of Performance Improvement in Negative Capacitance FETs

时 间： 2018 年 9月 29日 10: 00 – 12 : 00

地 点： 南五楼 612 学术报告厅

报告人： 韩根全 教授， 西安电子科技大学微电子学院

邀请人： 王兴晟 教授

报告摘要：

The evolution of Complementary Metal-Oxide-Semiconductor (CMOS) technology is coming to a stage where geometric device scaling alone does not promise the historical pace of improvement in integrated circuit (IC) performance. Without the use of new materials or new mechanism, it is difficult to enhance the drive current or computational speed while keeping the off-state leakage current or power consumption low. Research efforts were devoted to exploring the beyond CMOS devices with sub-60 mV/decade SS for ultralow power applications. Negative capacitance (NC) FETs were proposed as the promising alternatives, with capability of steepening the SS. In this talk, the underlying mechanism of performance improvement in NCFETs will be discussed.

报告人介绍：

韩根全教授本科毕业于清华大学，在中科院半导体研究所获得博士学位，西安电子科技大学微电子学院教授，优秀青年基金获得者，入选陕西省“百人计划”。从2008到2013年韩根全博士在新加坡国立大学Silicon Nano Device Laboratory (SNDL)实验室从事高端CMOS器件研制。韩博士在高迁移率非硅材料CMOS器件、隧穿晶体管以及负电容晶体管器件研制方面取得了国际领先的研究成果，相关研究成果被Semiconductor Today等网站多次转载。韩根全博士发表论文100多篇，在IEEE顶级会议International Electron Devices Meeting (IEDM) 和 VLSI Symposium on Technology (VLSI) 上发表多篇文章。