ZHAO YAN LI
·Paper Publications
- [11] Jingshu Guo, and Yanli Zhao*, Analysis Of Mode Hybridization In Tapered Waveguides, IEEE Photonics Technology Letters, 2015.12.01, 27(23): 2411-2444..
- [12] Z.W. Wu, Yanli Zhao*, B. Tang, and R.F. Wang, Highly Reliable VCSEL With Nonquarter-Wave DBR, IEEE Photonics Technology Letters, 2015.07.15, 27(14):1499-1502..
- [13] Ke Wen, Yanli Zhao*, Jing Gao, Shibo Zhang, and Junjie Tu, Design of a Coherent Receiver Based on InAs Electron Avalanche Photodiode for Free-Space Optical Communications, IEEE Transactions On Electron Device, 2015.4.27, 62(6): 1932-1938..
- [14] Shibo Zhang, Yanli Zhao*, Study On Ionization In Charge Layer Of InP/InGaAs SAGCM Avalanche Photodiodes, Opt Quant Electron, 2015.03.26, 47(8): 2689-2696..
- [15] Jing Gao, Ji Zhang, Yanli Zhao*, Low Polarization Dependence For Evanescently Coupled Avalanche Photodiodes: Theoretical Analysis And Design, Opt Quant Electron, 2015.01.18, 47(8): 1-6..
- [16] Jingjing Xiang, Yanli Zhao*, Comparison of waveguide avalanche photodiodes with InP and InAlAs multiplication layer for 25 Gb∕s operation, Optical Engineering, 2014.04.28, 53(4)：046106-046109..
- [17] Lingjie Wang, Yanli Zhao*, Chuan Shi, Zheng Chen, Yuanzhong Xu, and Wen Liu, An Effective Integration Solution for 100 Gb/s DP-QPSK Coherent Receiver With a Small Skew, IEEE Photonics Technology Letters，2014.02.01, 26(3), 227-230..
- [18] Yanli Zhao*, Impact Ionization in Absorption, Grading, Charge,and Multiplication Layers of InP/InGaAs SAGCM APDs With a Thick Charge Layer, IEEE Transactions On Electron Device, 2013.10.04, 60(10): 3493-3499..
- [19] Lingjie Wang, Yanli Zhao*, Yuanzhong Xu, Tianhong Zhou, Weihua Liu, Zheng Chen, and Wen Liu, Excess Loss Reduction in Low Cost Wide Waveguide Gap Polarization Mode Converter, IEEE Photonics Technology Letters, 2013.04.15, 25(8):741-744..
- [20] Yanli Zhao*, Dongdong Zhang, Long Qin, Qi Tang, Ruihua Wu, Jianjun Liu, Youping Zhang, Hong Zhang, Xiuhua Yuan, and Wen Liu，InGaAs–InP avalanche photodiodes with dark current limited by generation-recombination, Optics Express, 2011.04.25, 19(9): 8546-8556..