王兴晟
论文成果
当前位置: Chinese homepage >> 科学研究 >> 论文成果- Yifan Yang,Zichong Zhang,Pinfeng Jiang,Rui Su,Menghua Huang,Tonghui Lin,Xiangshui Miao.Xingsheng Wang.Promote Hf0.5Zr0.5O2 FTJs ON/OFF by Thermal Rewake-up Operation for Neuromorphic Computing.IEEE Electron Device Letters,2023,
- Chengyu Zhang,Yinghao Ma,Yujie Song,Fan Yang,Yi Wang,Qiwen Wu,Xiangshui Miao.Xingsheng Wang.Logic-In-Memory Approach Realizing Memristor-based Multiplexers.IEEE Transactions on Electron Devices,2023,(12):6341-6346
- Meiqing Wang,Menghua Huang,Chengxu Wang,Hua-Jun Sun,Xiangshui Miao.Xingsheng Wang.Stepped Identical Reset-Pulse and Lookup Table Programming of Multilevel Conductance in HfOx/AlOy Superlattice-Like Memristors.[J].IEEE Transactions on Electron Devices,2023,(9):4628-4634
- Danzhe Song,Fan Yang,Chengxu Wang,Nan Li,Pinfeng Jiang,Bin Gao,Xiangshui Miao.Xingsheng Wang.Mitigate IR-Drop Effect by Modulating Neuron Activation Functions for Implementing Neural Networks on Memristor Crossbar Arrays.[J].IEEE Electron Device Letters,2023,(8):1280-1283
- Zichong Zhang,Chengxu Wang,Yifan Yang,Xiangshui Miao.Xingsheng Wang.Polarization enhancement in Hf0.5Zr0.5O2 capacitors induced by oxygen vacancies at elevated temperatures.[J].Applied Physics Letters,2023,152902
- Chengxu Wang,Hao Yu,Yichen Wang,Zichong Zhang,Xiangshui Miao.Xingsheng Wang.Modelling and physical mechanism analysis of the effect of polycrystalline-ferroelectric gate on FE-FinFET.[J].SCIENCE CHINA Information Sciences,2023,(5):159403
- Haowen Luo,Ruihan Li,Xiangshui Miao.Xingsheng Wang.A Comprehensive Study of Device Variability of Sub-5nm Nanosheet Transistors and Interplay with Quantum Confinement Variation.[J].SCIENCE CHINA Information Sciences,2023,(2):129402
- Ruihan Li,Haowen Luo,Yichen Wang,Zhengwu Yuan,Asen Asenov,Xiangshui Miao.Xingsheng Wang.Improved compact model extraction of statistical variability in 5 nm nanosheet transistors and applied to SRAM simulations.[J].Semiconductor Science and Technology,2022,(9):095010
- Fan Yang,Yi Wang,Chengxu Wang,Yinghao Ma,Xiangshui Miao.Xingsheng Wang.High-Entropy True Random Number Generator based on Memristor Reset Switching.[J].IEEE Electron Device Letters,2022,(9):1459-1462
- Chengxu Wang,Ge-Qi Mao,Menghua Huang,Enming Huang,Zichong Zhang,Junhui Yuan,Weiming Cheng,Kan-Hao Xue,Xiangshui Miao.Xingsheng Wang.HfOx/AlOy Superlattice-Like Memristive Synapse.[J].Advanced Science,2022,2201446