18luck新利电竞主页平台管理系统 Xingsheng Wang--英文主页--Paper Publications

Xingsheng Wang

Recommended Ph.D.Supervisor Recommended MA Supervisor

·Paper Publications

Current position: 英文主页 > Scientific Research > Paper Publications

[21] Qiang Huo, Zhenhua Wu, Weixing Huang, Jiaxin Yao, Jianhui Bu, Ming Liu.Zhenhua Wu, Xingsheng Wang, Feng Zhang, Ling Li.Physics-Based Device-Circuit Cooptimization Scheme for 7-nm Technology Node SRAM Design and Beyond.[J].IEEE Transactions on Electron Devices,2020,(3):907-914
[22] Huan Liu, Chengxu Wang, Genquan Han , Jing Li , Yue Peng , Yan Liu , Xingsheng Wang , Ni Zhong, Chungang Duan, Xinran Wang, Nuo Xu, Tsu-Jae King Liu, Yue Hao.Genquan Han.ZrO2 Ferroelectric FET for Non-volatile Memory Application.[J].IEEE Electron Device Letters,2019,(9):1419-1422
[23] Meng Duan,M. Duan , C. Navarro , B. Cheng, F. Adamu-Lema , Xingsheng Wang , V. P. Georgiev , F. Gamiz , C. Millar,A. Asenov.Meng Duan.Thorough Understanding of Retention Time of Z2FET Memory Operation.[J].IEEE Transactions on Electron Devices,2019,(1):383-388
[24] Xingsheng Wang, V. P. Georgiev, F. Adamu-Lema, L. Gerrer, S. M. Amoroso,A. Asenov.Xingsheng Wang.Chapter 6: TCAD-based design technology co-optimization for variability in nanoscale SOI FinFETs.Integrated Nanodevice and Nanosystem Fabrication: Materials, Techniques, and New Opportunities,2017,
[25] Xingsheng Wang,X. Wang, B. Cheng, D. Reid, A. Pender, P. Asenov, C. Millar,A. Asenov.Xingsheng Wang.FinFET Centric Variability-Aware Compact Model Extraction and Generation Technology Supporting DTCO.[J].IEEE Transactions on Electron Devices,2015,(10):3139–3146
[26] Asen Asenov,A. Asenov, B. Cheng, X. Wang, A. R. Brown, C. Millar, C. Alexander, S. M. Amoroso, J. B. Kuang,S. Nassif.Asen Asenov.Variability Aware Simulation Based Design-Technology Cooptimization (DTCO) Flow in 14 nm FinFET/SRAM Cooptimization.IEEE Transactions on Electron Devices,2015,(6):1682–1690
[27] Fikru Adamu-Lema, Xingsheng Wang,F. Adamu-Lema, X. Wang, S. M. Amoroso, C. Riddet, B. Cheng, L. Shifren, R. Aitken, S. Sinha, G. Yeric,A. Asenov.Performance and variability of doped multi-threshold FinFETs for 10nm CMOS.IEEE Transactions on Electron Devices,2014,(10):3372-3378
[28] Xingsheng Wang,X. Wang, A. R. Brown, B. Cheng, S. Roy,A. Asenov.Xingsheng Wang.Drain Bias Effects on Statistical Variability and Reliability and Related Subthreshold Variability in 20-nm Bulk Planar MOSFETs.Solid-State Electronics,2014,99–105
[29] Asen Asenov,A. Asenov, B. Cheng, X. Wang, A. R. Brown, D. Reid, C. Millar,C. L. Alexander.Simulation Based Transistor-SRAM Co-Design in the Presence of Statistical Variability and Reliability.Proc. IEEE International Electron Devices Meeting (IEDM),2013,818-821
[30] Xingsheng Wang,X. Wang, B. Cheng, A. R. Brown, C. Millar, J. B. Kuang, S. Nassif,A. Asenov.Xingsheng Wang.Interplay Between Process-Induced and Statistical Variability in 14-nm CMOS Technology Double-Gate SOI FinFETs.[J].IEEE Transactions on Electron Devices,2013,(8):2485–2492

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