个人信息
Personal information
教授 博士生导师
所在单位：集成电路学院
学历：研究生(博士)毕业
学位：博士学位
毕业院校：18luck新利电竞
学科：微电子学与固体电子学曾获荣誉：
2022 奥林帕斯先锋奖
2021 湖北省杰青
2021 湖北省青年拔尖人才培养计划
2020 湖北省技术发明一等奖（第二完成人）
2013 湖北省年度“十大科技事件”
2013 湖北省优秀博士学位论文
2014 湖北省优秀学士学位论文指导教师
2015 18luck新利电竞 教师教学竞赛二等奖
2017 18luck新利电竞 光学与电子信息学院“我最喜爱的教师班主任“
2020 18luck新利电竞 光学与电子信息学院突出贡献一等奖
- [1] 朱荣江,缪向水,高科,赵锐哲.童浩.Atomic Layer Deposition of GeSb2Te4 Thin Films for Reliable Phase Change Memory with a High Dynamic Range.[J].IEEE Electron Device Letters,4513,
- [2] 赵锐哲,李鑫,缪向水.童浩,缪向水.A nanoribbon device for analog phase change memory targeting neural network applications.[J].Applied Physics Letters,4512,(3):033503
- [3] 冯择阳,王校杰,缪向水,蔡经纬.童浩.All-van der Waals stacking ferroelectric field-effect transistor based on In2Se3 for high-density memory.[J].Science China Information Sciences,4511,(8):182401
- [4] 王伦,缪向水,童浩,陈江西,刘梓轩,温晋宇.童浩.Thermally Stable and High-Speed Ge-Te Based Ovonic Threshold Switching Selector With a Ge Intercalated Structure.[J].IEEE Electron Device Letters,4504,(7):1096-1099
- [5] 温晋宇,付雨阳,缪向水,王浩,马国坤,左文斌,朱启航,杨岭,王伦.童浩,李祎.A 2.22 Mb/s True Random Number Generator Based on a GeTe x Ovonic Threshold Switching Memristor.[J].IEEE Electron Device Letters,4500,(5):853-856
- [6] 王伦,缪向水,赵锐哲,温晋宇,陈江西,张卓然,刘梓轩.童浩.Refresh Operation Method for Solving Thermal Stability Issue and Improving Endurance of Ovonic Threshold Switching Selector.[J].Journal of Materials Chemistry C,4500,(16):5411-5421
- [7] 赵锐哲,缪向水.童浩.Trade‐Off between Multilevel Characteristics and Power Consumption of High‐Aspect‐Ratio Phase‐Change Memory.[J].physica status solidi (RRL) – Rapid Research Letters,4495,(8):2200463
- [8] 余颖洁,赵锐哲,童浩.李祎.In‐Memory Search for Highly Efficient Image Retrieval.[J].Advanced Intelligent Systems,4494,(3):2200268
- [9] 林俊,童浩.徐明.Design of all-phase-change-memory spiking neural network enabled by Ge-Ga-Sb compound.[J].Science China Materials,4492,(4):1551-1558
- [10] 王伦,陈子琪,缪向水.程伟明,童浩.Controllable On-Resistance and Its Thermal-Induced Channel Expansive Model in Ovonic Threshold Switch Selector.[J].IEEE Transactions on Electron Devices,4489,(1):366-370