·Paper Publications
- [1] Modelling of dual-port computing operations of a phase-change memory cell.
- [2] Pr-based metallic glass films used as resist for phase-change lithography.
- [3] Modeling of transient thermal dissipation of nanoscale phase-change memory cells in the pulse domain.
- [4] Temperature dependence of SET switching characteristics in phase-change memory cells.
- [5] Exposure strategy and crystallization of Ge-Sb-Te thin film by maskless phase-change lithography.
- [6] Metallic resist for phase-change lithography, Scientific Reports.
- [7] Continuous controllable amorphization ratio of nanoscale phase change memory cells.
- [8] Polarization-based multiple-bit optical data storage.
- [9] Thermal dispersion and secondary crystallization of phase change memory cells.
- [10] Picosecond amorphization of chalcogenides material: From scattering to ionization.