李学飞

博士生导师硕士生导师

个人信息更多+

性别：男
在职信息：在职
所在单位：国家脉冲强磁场科学中心
学历：研究生(博士)毕业
学位：理学博士学位

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论文成果

当前位置: 中文主页 - 科学研究 - 论文成果

(11) Xuefei Li, Xiong Xiong, Tiaoyang Li, Sichao Li, Zhenfeng Zhang, and Yanqing Wu. Effect of dielectric interface on the performance of MoS2 transistors. ACS Applied Materials & Interfaces 2017, 9, 44602-44608..
(12) Xuefei Li, Yuchen Du, Mengwei Si, Lingming Yang, Sichao Li, Tiaoyang Li, Xiong Xiong, Peide Ye and Yanqing Wu. Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors. Nanoscale 2016, 8, 3572-3578..
(13) Xuefei Li, Lingming Yang, Mengwei Si, Sichao Li, Mingqiang Huang, Peide Ye, and Yanqing Wu. Performance potential and limit of MoS2 transistors. Advanced Materials 2015, 27, 1547-1552..
(14) Xuefei Li, Xiaobo Lu, Tiaoyang Li, Wei Yang, Jianming Fang, Guangyu Zhang, and Yanqing Wu. Noise in graphene superlattices grown on hexagonal boron nitride. ACS Nano 2015, 9, 11382-11388..
(15) Xiong Xiong, Jiyang Kang, Shiyuan Liu, Anyu Tong, Tianyue Fu, Xuefei Li, Ru Huang, and Yanqing Wu Nonvolatile logic and ternary content-addressable memory based on complementary black phosphorus and rhenium disulfide transistors. Advanced Materials 2022, 34, 2106321..
(16) Xiong Xiong, Anyu Tong, Xin Wang, Shiyuan Liu, Xuefei Li, Ru Huang, and Yanqing Wu. Demonstration of vertically-stacked CVD Monolayer Channels: MoS2 nanosheets GAA-FET with Ion>700 µA/µm and MoS2/WSe2 CFET, 11-16 Dec. 2021, 2021 IEEE International Electron Devices Meeting (IEDM)..
(17) Xiong Xiong, Mingqiang Huang, Ben Hu, Xuefei Li, Fei Liu, Sichao Li, Mengchuan Tian, Tiaoyang Li, Jian Song, and Yanqing Wu. A transverse tunnelling field-effect transistor made from a van der Waals heterostructure. Nature Electronics 2020, 3, 106-112..
(18) Shengman Li, Chengru Gu, Xuefei Li, Ru Huang, Yanqing Wu. 10-nm channel length indium-tin-oxide transistors with Ion = 1860 μA/μm, Gm = 1050 μS/μm at Vds = 1 V with BEOL compatibility, 12-18 Dec. 2020, 2020 IEEE International Electron Devices Meeting (IEDM)..
(19) Mengfei Wang, Mengchuan Tian, Zhenfeng Zhang, Shengman Li, Runsheng Wang, Chengru Gu, Xiaoyu Shan, Xiong Xiong, Xuefei Li, Ru Huang and Yanqing Wu. High performance gigahertz flexible radio frequency transistors with extreme bending conditions, 7-11 Dec. 2019, 2019 IEEE International Electron Devices Meeting (IEDM)..
(20) Shengman Li, Mengchuan Tian, Chengru Gu, Runsheng Wang, Mengfei Wang, Xiong Xiong, Xuefei Li, Ru Huang and Yanqing Wu. BEOL compatible 15-nm channel length ultrathin indium-tin-oxide transistors with Ion = 970 μA/μm and On/off ratio Near 10^11 at Vds = 0.5 V, 7-11 Dec. 2019, 2019 IEEE International Electron Devices Meeting (IEDM)..

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