·Paper Publications
- [1] (1) Xuefei Li, Xinhang Shi, Damiano Marian, David Soriano, Teresa Cusati, Giuseppe Iannaccone, Gianluca Fiori, Qi Guo, Wenjie Zhao, Yanqing Wu. Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices. Science Advances 2023, 9, eade5706..
- [2] (2) Xinhang Shi, Xuefei Li, Qi Guo, Min Zeng, Xin Wang, and Yanqing Wu. Ultrashort channel chemical vapor deposited bilayer WS2 field-effect transistors. Applied Physics Reviews 2023, 10, 011405..
- [3] (3) Xinhang Shi, Xin Wang, Shiyuan Liu, Qi Guo, Lei Sun, Xuefei Li, Ru Huang, and Yanqing Wu. High-performance bilayer WSe2 pFET with record Ids = 425 μA/μm and Gm = 100 μS/μm at Vds = -1 V by direct growth and fabrication on SiO2 Substrate, 3-7 Dec. 2022, 2022 IEEE International Electron Devices Meeting (IEDM)..
- [4] (4) Xinhang Shi, Xuefei Li, Qi Guo, Han Gao, Min Zeng, Yibo Han, Shiwei Yan, and Yanqing Wu. Improved self-heating in short-channel monolayer WS2 transistors with high-thermal conductivity BeO dielectrics. Nano Letters 2022, 22, 7667-7673..
- [5] (5) Xuefei Li, Zhenfeng Zhang, Tingting Gao, Xinhang Shi, Chengru Gu, and Yanqing Wu. Van der Waals epitaxial trilayer MoS2 crystals for high-speed electronics. Advanced Functional Materials 2022, 32, 2208091..
- [6] (6) Xuefei Li, Zhuoqing Yu, Xiong Xiong, Tiaoyang Li, Tingting Gao, Runsheng Wang, Ru Huang and Yanqing Wu. High-speed black phosphorus field-effect transistors approaching ballistic limit. Science Advances 2019, 5, eaau3194..
- [7] (7) Xuefei Li, Jingyi Wu, Yunsheng Ye, Shengman Li, Tiaoyang Li, Xiong Xiong, Xiaole Xu, Tingting Gao, Xiaolin Xie, and Yanqing Wu. Performance and reliability improvement under high current densities in black phosphorus transistors by interface engineering. ACS Applied Materials & Interfaces 2019, 11, 1587-1594..
- [8] (8) Xuefei Li, Roberto Grassi, Sichao Li, Tiaoyang Li, Xiong Xiong, Tony Low, and Yanqing Wu. Anomalous temperature dependence in metal-black phosphorus contact. Nano Letters 2018, 18, 26-31..
- [9] (9) Xuefei Li, Xiong Xiong, Tiaoyang Li, Tingting Gao, and Yanqing Wu. Optimized transport of black phosphorus top gate transistors using alucone dielectrics. IEEE Electron Device Letters 2018, 39, 1952-1955..
- [10] (10) Xuefei Li, Tiaoyang Li, Zhenfeng Zhang, Xiong Xiong, Sichao Li, and Yanqing Wu. Tunable low-frequency noise in dual-gate MoS2 transistors. IEEE Electron Device Letters 2018, 39, 131-134..