高国营，副教授，博士生导师，中共党员，博士毕业于18luck新利电竞 凝聚态物理专业。主要从事自旋电子学与热电子学的研究，以第一/通讯作者在PRB、APL、2D Mater.和Nanoscale等刊物发表论文80多篇(包括ESI高被引，编辑推荐和期刊亮点、热点、封面)，被包括Science, PRL和Nat. Rev. Mater.等论文引用3600多次，单篇被引用10次以上的论文10篇。担任Scientific Reports编委，Front. Phys.客座编辑，Nano Lett.、Adv. Mater./Sci.和APL等多个期刊的审稿人。曾获校研究生科技十佳、省优秀博士学位论文、校华中学者、爱思唯尔中国高被引学者以及CPB、物理学报优秀评阅人等称号。先后到日、美、德、意、俄等国开展学术交流。主持3项国家自然科学基金、1项教育部博士点基金和2项省自然科学基金。指导博士毕业生7名，硕士毕业生8名。

个人主页：http://faculty.hust.edu.cn/gaoguoying/zh_CN/index.htm

办公室：逸夫科技楼南412；邮箱：guoying_gao@mail.hust.edu.cn

研究方向：

1) 低维磁性的调控：利用应变、载流子掺杂、电场、Janus结构和异质结构等手段，调控磁各向异性、磁转变温度、高自旋极化率(磁性半金属、自旋无能隙半导体、双极磁性半导体)、谷极化和Rashba自旋劈裂等。

2) 低维自旋输运：磁隧道结和铁电隧道结的输运性质，包括隧穿磁电阻、隧穿电致电阻、自旋过滤效应、自旋二极管效应和自旋塞贝克效应等。

3) 热电输运: 能带工程、低维结构和化学键等对电子和声子热输运的调控。

讲授课程：

大学物理(一、二)，物理实验(一、二)，凝聚态物理前沿。

代表作：

1) Z. Xu, Q. Xia, L. Zhang, and G. Gao∗, “van der Waals p-n heterostructure GaSe/SnS₂: high thermoelectric figure of merit and strong anisotropy”, Nanoscale (2024, https://doi.org/10.1039/D3NR05284B).

2) L. Zhang, Y. Zhao, Y. Liu, and G. Gao∗, “High spin polarization, large perpendicular magnetic anisotropy and room-temperature ferromagnetism by biaxial strain and carrier doping in Janus MnSeTe and MnSTe”, Nanoscale 15, 18910 (2023).

3) L. Zhang, Y. Liu, Z. Xu, and G. Gao∗, “Electronic phase transition, perpendicular magnetic anisotropy and high Curie temperature in Janus FeClF”, 2D Mater. 10, 045005 (2023).

4) Y. Liu, L. Zhang, X. Wu, and G. Gao∗, “Enhanced ferromagnetism, magnetic anisotropy, and spin polarization in Janus CrSeTe via strain and doping”, Appl. Phys. Lett. 123, 192407 (2023).

5) L. Hu, J. Han, and G. Gao∗, “Layer- and barrier-dependent spin filtering effect and high tunnel magnetoresistance in FeCl₂ based van der Waals junctions”, Appl. Phys. Lett. 123, 052401 (2023).

6) L. Hu, X. Wu, Y. Feng, Y. Liu, Z. Xu, and G. Gao∗, “Spin filtering effect, thermal spin diode effect and high tunneling magnetoresistance in the Au/GdI₂/Au van der Waals junction”, Nanoscale 14, 7891 (2022).

7) Y. Feng, Z. Wang, X. Zuo, and G. Gao∗, Electronic phase transition, spin filtering effect and spin Seebeck effect in 2D high-spin-polarized VSi₂X₄ (X=N, P, As), Appl. Phys. Lett. 120, 092405 (2022). (Editor’s Pick)

8) Y. Feng, N. Liu and G. Gao*, “Spin transport properties in Dirac spin gapless semiconductors Cr₂X₃ with high Curie temperature and large magnetic anisotropic energy”, Appl. Phys. Lett. 118, 112407 (2021).

9) Y. Feng, X. Wu and G. Gao∗, “High tunnel magnetoresistance based on 2D Dirac spin gapless semiconductor VCl₃”, Appl. Phys. Lett. 116, 022402 (2020).

10) Y. Feng, X. Wu, L. Hu and G. Gao∗, “FeCl₂/MoS₂/FeCl₂ van der Waals junction for spintronic applications”, J. Mater. Chem. C 8, 14353 (2020). (Communition)

11) X. Wu, L. Xiong, Y. Feng, C. Wang, and G. Gao∗, “The half-metallicity and the spin filtering, NDR and spin Seebeck effects in 2D Ag-doped SnSe₂ monolayer”, J. Chem. Phys. 150, 064701 (2019).

12) Y. Feng, X. Wu, J. Han, and G. Gao∗, “Robust half-metallicities and perfect spin transport properties in 2D transition metal dichlorides”, J. Mater. Chem. C 6, 4087 (2018).

13) C. Wang, G. Ding, X. Wu, S. Wei and G. Gao∗, “Electron and phonon transport properties of layered Bi₂O₂Se and Bi₂O₂Te from first-principles calculations”, New J. Phys. 20, 123014 (2018).

14) J. Han and G. Gao∗, “Large tunnel magnetoresistance and temperature-driven spin filtering effect based on the compensated ferrimagnetic spin gapless semiconductor Ti₂MnAl”, Appl. Phys. Lett. 113, 102402 (2018).

15) J. Han, Y. Feng, K. Yao and G.Y. Gao∗, “Spin transport properties based on spin gapless semiconductor CoFeMnSi”, Appl. Phys. Lett. 111, 132402 (2017).

16) G. Ding, J. Chen, K. Yao and G. Gao∗, “Enhanced thermoelectric properties of layered ZrS₂ by orbital engineering”, New J. Phys. 19, 073036 ( 2017).

17) G. Ding, J. Carrete, W. Li, G.Y. Gao∗ and K. Yao, “Ultralow lattice thermal conductivity in topological insulator TlBiSe₂”, Appl. Phys. Lett. 108, 233902 (2016).

18) G. Gao∗, G. Ding, J. Li, M. Wu, K. Yao and M. Qian, “Monolayer MXenes: Promising half-metals and spin gapless semiconductors”, Nanoscale 8, 8986 (2016). (ESI, cited 349)

19) G.Y. Gao∗ and K. L. Yao∗, “Surface half-metallicity of CrS thin films and perfect spin filtering and spin diode effects of CrS/ZnSe heterostructure”, Appl. Phys. Lett. 105, 182405 (2014).

20) G.Y. Gao∗ and K.-L. Yao∗, “Antiferromagnetic half-metals, gapless half-metals, and spin gapless semiconductors: The D0₃-type Heusler alloys”, Appl. Phys. Lett. 103, 232409 (2013) (cited 151)

21) G. Y. Gao∗, L. Hu, K. L. Yao, B. Luo, and N. Liu, “Large half-metallic gaps in the quaternary Heusler alloys CoFeCrZ (Z=Al, Ga, Si, Ge): A first-principles study”, J. Alloys Compd. 551, 539 (2013). (ESI, cited 238)

22) G.Y. Gao∗ and K. L. Yao∗, “Half-metallic sp-electron ferromagnets in rock-salt structure: The case of SrC and BaC”, Appl. Phys. Lett. 91, 082512 (2007). (cited 100)

23) G.Y. Gao∗, K. L. Yao∗, E. Sasioglu∗, L. M. Sandratskii, Z. L. Liu and J. L. Jiang, “Half-metallic ferromagnetism in zinc-blende CaC, SrC, and BaC from first-principles”, Phys. Rev. B 75, 174442 (2007). (cited 298)

24) 张龙, 高国营*, “范德瓦尔斯气体的状态方程与多方过程”, 物理与工程 (2023年第6期).